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Beam Injection Assessment of Defects in Semiconductors

Solid State Phenomena Volumes 63 - 64

• Papers
• Abstracts

• p341 Fabrication and Ellipsometric Investigation of Thin Films of Rare-Earth Oxides   [ 272 K ]
  Authors: O.V. Fursenko, T.V. Semikina, A.N. Shmyrjeva
• p347 Non-Destructive Investigations of Co and CoSi_2-x Films on Si Substrate   [ 233 K ]
  Authors: N.L. Dmitruk, O.V. Fursenko, Arthur Medvid, D. Knight, A. Grigonis
• p353 Characterization of Laser-Irradiated Cd_xHg_1-xTe Solid Solutions by Scanning Microscopy Method   [ 487 K ]
  Authors: V.A. Gnatyuk
• p361 Scanning Acoustic Microscopes for the Investigation of Ferroelectric Properties of Materials   [ 602 K ]
  Authors: Xing Gang Liu, L.J. Balk, G. Shafirstein, A. Eckau, Qing Rui Yin
• p369 The Nature of the Electronic States of Cu₃Si-Precipitates in Silicon   [ 338 K ]
  Authors: Andreas Sattler, Henrik Hedemann, Andrei A. Istratov, Michael Seibt, Wolfgang Schröter
• p375 TEM and Photoluminescence Investigations of InGaAs/GaAs Quantum Well Layers   [ 807 K ]
  Authors: C. Frigeri, A. Brinciotti, D.M. Ritchie, A. Di Paola
• p383 The Assessment of Micro-Analytical Techniques to the Semiconductor Manufacturing Environment   [ 896 K ]
  Authors: J.L Corbacho, A. Urquía, Asunción Fernández, G. Sánchez, M. Recio, V. Martín, F. Barbado, C. Morilla, A. Riloba, J. M. de la Hoz
• p395 Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown   [ 1 M ]
  Authors: M. Tamatsuka, K. Miki
• p407 Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique   [ 619 K ]
  Authors: H. Tomokage, Y. Ishiwata, H. Souno, Masahiro Kawakami, N. Sonoda
• p413 Analysis of Non-Uniform Contamination Profiles by Lifetime Data   [ 538 K ]
  Authors: Maria-Luisa Polignano, Domenico Caputo, G. Pavia, F. Zanderigo