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Beam Injection Assessment of Defects in Semiconductors

Solid State Phenomena Volumes 63 - 64

• Papers
• Abstracts

• p421 Scanning Photoluminescence for Wafer Characterization   [ 929 K ]
  Authors: V. Higgs, F. Chin, Xue Cheng Wang
• p433 Failure Mode Analysis of a 0.25 μm CMOS Technology by Scanning Electron and Ion Beams   [ 1 M ]
  Authors: D. Krüger, R. Rosenkranz, B. Tippelt, M. Kuhnert, K. Grießbach, A. Lamprecht, S. Hennecke
• p443 Failure Analysis of Neutron-Irradiated MQW InGaAsP/InP Lasers by EBIC   [ 387 K ]
  Authors: M. Romero, Daniel Araújo, K. Gill, F. Vasey, R. García
• p457 Inline Analysis of Defects in Microelectronic Fabrication by Optical and Scanning Electron Microscopical Techniques   [ 622 K ]
  Authors: C. Morilla, Martin Kittler
• p465 Application of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor Structures   [ 473 K ]
  Authors: D. Krüger, K. Iltgen, R. Kurps
• p473 Correlation of Cathodoluminescence and EBIC Contrast in GaAs/Al_xGa_1-xAs Quantum Well Structures   [ 444 K ]
  Authors: U. Jahn, R. Hey, H. Kostial, H.T. Grahn
• p481 EBIC and Cathodoluminescence Study of the Bonded Silicon Wafers   [ 573 K ]
  Authors: Kenichi Ikeda, Takashi Sekiguchi, Syouko Ito, Masashi Suezawa
• p489 Spatially Resolved Cathodoluminescence Study on CVD Homoepitaxial Diamond Film   [ 374 K ]
  Authors: H. Watanabe, Daisuke Takeuchi, Hideyo Okushi, K. Kajimura, Takashi Sekiguchi
• p497 Cathodoluminescence Study of Heavily Proton Irradiated Heteroepitaxial n⁺-p InP/Si Solar Cells   [ 311 K ]
  Authors: M. Romero, R.J. Walters, Daniel Araújo, R. García
• p509 Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods   [ 787 K ]
  Authors: O. Krüger, Winfried Seifert, Martin Kittler, A. Gutjahr, M. Konuma, K. Said, J. Poortmans