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Ultra Clean Processing of Silicon Surfaces

Solid State Phenomena Volumes 65 - 66

• Papers
• Abstracts

• p211 Kelvin-SPV Measurements of Atomically-Flat Si(111) Surfaces Contaminated with Metallic Ions   [ 169 K ]
  Authors: T. Tagawa, Tsugunori Okumura
• p215 Comparison of Analytical Methods for Residue Detection of Resist Removal Processes   [ 228 K ]
  Authors: T. Riihisaari, J. Likonen, Arto Kiviranta, S. Eränen, S. Lehto, J. Tuominen, T. Lindblom, E. Muukkonen
• p219 Dry Cleaning Technologies Using UV-Excited Radicals and Cryogenic Aerosols   [ 297 K ]
  Authors: Tadashi Ito, R. Sugino
• p225 A New HF Vapor Process for Native Oxide Removal, Suited for Cluster Applications   [ 251 K ]
  Authors: A.B. Storm, H. Sprey, J.W. Maes, E. Granneman, R. de Blank, Erika Röhr, M. Caymax, Marc M. Heyns
• p229 Silicon Surface Cleaning for Low Temperature Silicon Epitaxial Growth   [ 185 K ]
  Authors: Masao Mayuzumi, M. Imai, S. Nakahara, Katsuya Inoue, J. Takahashi, Tadahiro Ohmi
• p233 Role of UV/Chlorine Exposure during Dry Surface Conditioning before Integrated Epi Deposition Process   [ 206 K ]
  Authors: J. Ruzyllo, Erika Röhr, M. Caymax, M. Baeyens, Thierry Conard, Paul W. Mertens, Marc M. Heyns
• p237 Electrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning Methods   [ 304 K ]
  Authors: M. Caymax, S. Decoutere, Erika Röhr, W. Vandervorst, Marc M. Heyns, H. Sprey, A.B. Storm, J.W. Maes
• p241 Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO₂/Si Interface   [ 240 K ]
  Authors: H. Nohira, Kunimasa Takahashi, Takeshi Hattori
• p245 Metal Enhanced Oxidation of Silicon   [ 177 K ]
  Authors: M. Börner, N. Junghans, S. Landau, B.O. Kolbesen
• p249 Effect of Si Surface Roughness on the Current-Voltage Characteristics of Ultra-Thin Gate Oxides   [ 207 K ]
  Authors: M. Houssa, T. Nigam, Paul W. Mertens, Marc M. Heyns