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Gettering and Defect Engineering in Semiconductor Technology VIII

Solid State Phenomena Volumes 69 - 70

• Papers
• Abstracts

• p429 Ultrasonic Influence on Dislocation Dynamics in Silicon   [ 240 K ]
  Authors: I.V. Ostrovskii, L.P. Steblenko, A.B. Nadtochii
• p437 P-N- Junction Peripheral Current Analysis using Gated Diode Measurements   [ 336 K ]
  Authors: A. Czerwinski, Eddy Simoen, A. Poyai, C. Claeys
• p443 Investigations of Extended Defects after Sulfur Diffusion in GaAs   [ 558 K ]
  Authors: N. Engler, H.S. Leipner, R.F. Scholz, P. Werner, F. Syrowatka, Jürgen Schreiber, U.M. Gösele
• p449 On the Reduction of the Critical Thickness in In_xGa_1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates   [ 488 K ]
  Authors: C. Frigeri, A. Brinciotti, D.M. Ritchie, G.P. Donzelli
• p455 Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon   [ 273 K ]
  Authors: P. Pichler
• p461 Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements   [ 513 K ]
  Authors: Vito Raineri, D. Cali, M. Camalleri, M. Di Dio, A. Puglisi
• p467 Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs   [ 297 K ]
  Authors: Eddy Simoen, C. Claeys, N.B. Lukyanchikova, M.V. Petrichuk, N.P. Garbar
• p473 Variations of Silicon Melt Convection in a Crucible with Boron Addition   [ 189 K ]
  Authors: Koichi Terashima, Seigo Nishimura
• p479 Electrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and Insulators   [ 266 K ]
  Authors: P. Viscor, M. Jensen, J. Vedde
• p485 Electron Spin Resonance of the P_b Centers Associated with Oxygen Precipitates in Silicon Crystals   [ 284 K ]
  Authors: Hiroshi Yamada-Kaneta, M. Koizuka