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Gettering and Defect Engineering in Semiconductor Technology VIII

Solid State Phenomena Volumes 69 - 70

• Papers
• Abstracts

• p551 Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes   [ 490 K ]
  Authors: Reinhart Job, J.A. Weima, G. Grabosch, D. Borchert, Wolfgang R. Fahrner, V. Raiko, Alexander G. Ulyashin
• p557 Oriented Silicon Films on Glass Substrates for Device Applications   [ 558 K ]
  Authors: M.D. Efremov, V.A. Volodin, V.V. Bolotov, A.V. Vishnyakov, O.K. Shabanova, D.I. Bragin, Liudmila I. Fedina, S.A. Kochubei
• p563 Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance   [ 276 K ]
  Authors: H. Ohyama, Eddy Simoen, Satoshi Kuroda, C. Claeys, Y. Takami, T. Hakata, H. Sunaga
• p571 Hydrogen Diffusion and Trapping in Microcrystalline Silicon   [ 225 K ]
  Authors: D. Ballutaud, L. Lusson, A. Boutry-Forveille, A. Lusson
• p577 Substrate Material for sub-0.25µm Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced Diffusion   [ 206 K ]
  Authors: M.T. Bostelmann, B. Leroy
• p583 Atomic Structure of Chalcogen-Hydrogen Complexes in Silicon   [ 316 K ]
  Authors: C.A.J. Ammerlaan, P.T. Huy
• p589 Electric Properties of Hydrogenated Polycrystalline CdS-CdSe Solid Solution Films   [ 438 K ]
  Authors: A.K. Fedotov, S. Manego, A.V. Mazanik, M. Tarasik, Yu. Trofimov, Alexander G. Ulyashin, A. Yanchenko
• p595 Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO₂-Si Systems   [ 248 K ]
  Authors: E.I. Terukov, B.J. Ber, V.Kh. Kudojarova, V.Ju. Davydov, A.N. Nazarov, Ja.N. Vovk, S. Ashok