HOME CONTACT

Username: Password:

> @scientific.net

Ultra Clean Processing of Silicon Surfaces

Solid State Phenomena Volumes 76 - 77

• Papers
• Abstracts

• p127 Iron Bulk Concentration Effect on the Yield & Reliability of Thin Oxides   [ 185 K ]
  Authors: Kah Keen Lai, Chee Kong Leong, Hwee Ling Yeo
• p131 Gap States at the Interface of Ultra-Thin Oxide and Organic Films on Si(100)   [ 188 K ]
  Authors: T. Bitzer, T. Rada, N.V. Richardson, T. Dittrich, F. Koch
• p135 Modification of Low-K SiCOH Film Porosity by a HF Solution   [ 229 K ]
  Authors: Denis Shamiryan, Mikhail R. Baklanov, Guy Vereecke, Serge Vanhaelemeersch, Karen Maex
• p139 Layer-By-Layer Oxidation of Silicon   [ 222 K ]
  Authors: Takeshi Hattori, Kazuhiko Takahashi, H. Nohira, Tadahiro Ohmi
• p145 The Evolution of Chemical Oxides Into Ultrathin Oxides: A Spectroscopic Characterization   [ 179 K ]
  Authors: J. Eng, R.L. Opila, J.M. Rosamilia, B.J. Sapjeta, Y.J. Chabal, T. Boone, R. Masaitis, Thomas Sorsch, Martin L. Green
• p149 Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO₂   [ 246 K ]
  Authors: Seiichi Miyazaki, Kazuhiro Morino, Masataka Hirose
• p153 The Origins of Fluorine in Dry Ultrathin Silicon Oxides   [ 196 K ]
  Authors: Guy Vereecke, Erika Röhr, R.J. Carter, Thierry Conard, H. De Witte, Marc M. Heyns
• p157 Structural and Electrical Characterization of Ultra-Thin SiO₂ Films Prepared by Catalytic Oxidation Method   [ 200 K ]
  Authors: Akira Izumi, Manabu Kudo, Hideki Matsumura
• p161 Characterization of DI Water/O₃ Oxidation of Si (100) and Si (111) Surfaces by OCP Measurements   [ 166 K ]
  Authors: Harald Okorn-Schmidt, C. D'Emic, R. Murphy
• p165 Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics   [ 189 K ]
  Authors: Joong S. Jeon, Bob Ogle