Polycrystalline Semiconductors VI
Solid State Phenomena Volumes 80 - 81
doi:10.4028/3-908450-63-2
-
p83
Poly-Crystallized SiGe Thin Films in a Low-Temperature Process
[
222 K
]
Authors: Takashi Noguchi
-
p89
Effect of Pressure and Temperature on the Electrical Properties of LPCVD Silicon-Germanium Thin Films
[
293 K
]
Authors: Denis Guillet, M. Sarret, H. Lhermite, O. Bonnaud
-
p95
Intra-Grain Defects - Limiting Factor for Low-Temperature Polycrystalline Silicon Films?
[
360 K
]
Authors: Thomas A. Wagner, L. Oberbeck, R.B. Bergmann, Jens Werner
-
p101
Structural Effects in Ultra-Thin Iridium Silicide
[
344 K
]
Authors: U. Hörmann, T. Remmele, C. Schür, M. Albrecht, Horst P. Strunk, H. Grünleitner, M. Schulz
-
p109
Hydrogen Diffusion through Deformed Si-Si Bonds at Grain Boundaries in Hot-Wire CVD Polycrystalline Silicon Films
[
368 K
]
Authors: Jatindra K. Rath, Ruud E.I. Schropp, W. Beyer
-
p115
Point Defects in Carbon-Rich Polycrystalline Silicon
[
333 K
]
Authors: B. Pivac, Igor Kovačević, V. Borjanović
-
p121
Hydrogen Penetration into Si under Wet Chemical Etching: Experiment and Simulation
[
283 K
]
Authors: O.V. Feklisova, E.B. Yakimov, Nikolai Yarykin
-
p127
Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films
[
252 K
]
Authors: G. Farhi, R. Cherfi, M. Aoucher, K. Zellama
-
p133
Visible Electroluminescence from an ITO/ZnS:Mn/n-Si Device
[
305 K
]
Authors: Takashi Hirate, Makoto Ueda, Tomomasa Satoh
-
p139
Properties Presented by Tin Oxide Thin Films Deposited by Spray Pyrolysis
[
234 K
]
Authors: Patrícia Nunes, Elvira Fortunato, Paula M. Vilarinho, Rodrigo Martins