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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

• Papers
• Abstracts

• p75 Optical Properties of Oxygen Agglomerates in Silicon   [ 242 K ]
  Authors: Simona Binetti, Sergio Pizzini, E. Leoni, R. Somaschini, Antonio Castaldini, Anna Cavallini
• p81 Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects   [ 356 K ]
  Authors: Roberto S. Brusa, W. Deng, Grzegorz P. Karwasz, Antonio Zecca
• p87 Silicon Isotope Shifts of the 648-cm^-1 Infrared Absorption Line of Oxygen in Silicon   [ 208 K ]
  Authors: Hiroshi Yamada-Kaneta
• p93 Thermal Donors in Silicon Implanted with Rare Earth Impurities   [ 225 K ]
  Authors: Valentin V. Emtsev, C.A.J. Ammerlaan, Boris A. Andreev, G.A. Oganesyan, D.S. Poloskin, E.I. Shek, N.A. Sobolev
• p99 Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon   [ 205 K ]
  Authors: G.N. Kamaev, V.V. Bolotov, S.A. Chern'aev, M.D. Efremov
• p105 Vibrational Modes of Oxygen Dimers in Germanium   [ 311 K ]
  Authors: V.V. Litvinov, L.I. Murin, J. Lennart Lindström, V.P. Markevich, A.A. Klechko
• p111 Oxygen Precipitation in Silicon Doped with Tin   [ 171 K ]
  Authors: L.I. Khirunenko, Yu.V. Pomozov, M.G. Sosnin
• p115 Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon   [ 674 K ]
  Authors: Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, I.V. Antonova, J. Jun
• p121 Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon   [ 297 K ]
  Authors: Vladimir Voronkov, Robert Falster
• p127 Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing   [ 331 K ]
  Authors: Timo Müller, G. Obermeier, T. Bearda, A. Huber, R. Schmolke, Wilfried von Ammon, Wilfried Lerch