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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

• Papers
• Abstracts

• p133 Hydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic Resonance   [ 311 K ]
  Authors: P.T. Huy, C.A.J. Ammerlaan
• p139 Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon   [ 368 K ]
  Authors: Reinhart Job, Alexander G. Ulyashin, Wolfgang R. Fahrner
• p145 Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching   [ 268 K ]
  Authors: A.L. Parakhonsky, E.B. Yakimov, De Ren Yang
• p150 Hydrogen-Related Defects in High-Resistivity Silicon   [ 236 K ]
  Authors: O.A. Soltanovich, O.V. Feklisova, E.B. Yakimov
• p155 Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon   [ 205 K ]
  Authors: D.V. Kilanov, L.N. Safronov, V.P. Popov
• p163 Atomistic Study of Boron Clustering in Silicon   [ 381 K ]
  Authors: Paola Alippi, Paolo Ruggerone, Luciano Colombo
• p171 Self-Interstitial Kinetics and Transient Phenomena in Si Crystals   [ 339 K ]
  Authors: Antonino La Magna, Salvatore Coffa, Sebania Libertino, Matthias Strobel, Luciano Colombo
• p177 Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose   [ 386 K ]
  Authors: Sandro Solmi, G. Mannino, Marco Servidori, M. Bersani, L. Mancini, S. Milita, Vittorio Privitera, M. Anderle
• p183 Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles   [ 346 K ]
  Authors: Filippo Giannazzo, Vito Raineri, Vittorio Privitera, F. Priolo
• p189 Incorporation, Diffusion and Agglomeration of Carbon in Silicon   [ 515 K ]
  Authors: P. Lavéant, P. Werner, G. Gerth, U.M. Gösele