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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

• Papers
• Abstracts

• p315 Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon   [ 279 K ]
  Authors: Alexander G. Ulyashin, Reinhart Job, Wolfgang R. Fahrner, Dieter Grambole, Folker Herrmann
• p323 Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites   [ 451 K ]
  Authors: Andrei A. Istratov, R. Sachdeva, C. Flink, S. Balasubramanian, Eicke R. Weber
• p331 Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers   [ 381 K ]
  Authors: Mohammad B. Shabani, Y. Shiina, S. Shimanuki, F.G. Kirscht
• p341 Copper-Defect and Copper-Impurity Interactions in Silicon   [ 446 K ]
  Authors: Stefan K. Estreicher, D. West, P. Ordejón
• p349 Efficiency of Intrinsic Gettering for Copper in Silicon   [ 267 K ]
  Authors: Seiichi Isomae, Hidetsugu Ishida, Toshihiko Itoga, Kazuyuki Hozawa
• p355 Nickel Gettering in Silicon: Role of Oxygen   [ 561 K ]
  Authors: G. Regula, R. El Bouayadi, Bernard Pichaud, E. Ntsoenzok
• p361 Electrical Activity of Dislocations in Si Decorated by Ni   [ 379 K ]
  Authors: Vitaly Kveder, Wolfgang Schröter, Michael Seibt, Andreas Sattler
• p367 Comparison of Nickel and Iron Gettering in Cz Silicon Wafers   [ 175 K ]
  Authors: F.G. Kirscht, B. Orschel, S. Rouvimov, M. Shabani
• p373 Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections   [ 449 K ]
  Authors: M. Rommel, G. Zoth, M. Ullrich, H. Ryssel
• p381 Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals   [ 253 K ]
  Authors: P. Geranzani, M. Pagani, C. Pello', G. Borionetti