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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

• Papers
• Abstracts

• p515 Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries   [ 310 K ]
  Authors: A.K. Fedotov, A.V. Mazanik, Alexander G. Ulyashin
• p523 Characterization of SiC Grown on Si(111) by Supersonic C₆₀ Beams   [ 285 K ]
  Authors: L. Aversa, R. Verucchi, G. Ciullo, A. Boschetti, L. Ferrari, P. Moras, M. Pedio, A. Pesci, S. Iannotta
• p529 Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD   [ 184 K ]
  Authors: J. Huran, I. Hotový, J. Staňo, A.P. Kobzev, N.I. Balalykin
• p533 Cavities in He-Implanted SiC   [ 416 K ]
  Authors: Jean François Barbot, Erwan Oliviero, Marie-Laure David, A. Declémy, C. Blanchard, Marie France Beaufort, A. van Veen
• p539 Study of Relaxed Si_0.7Ge_0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy   [ 358 K ]
  Authors: G. Wöhl, Erich Kasper, M. Klose, T. Hackbarth, H.-J. Herzog, H. Kibbel
• p545 On the Properties of Divacancies in Si_1-xGe_x   [ 236 K ]
  Authors: L.I. Khirunenko, Yu.V. Pomozov, M.G. Sosnin, N.V. Abrosimov, W. Schröder
• p551 Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si_1-xGe_x Structures Grown by Molecular Beam Epitaxy with Combined Sources   [ 250 K ]
  Authors: L.K. Orlov, N.L. Ivina
• p557 Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si_1-xGe_x Alloy   [ 358 K ]
  Authors: C. Cerrina, A. Nejim, Y. Wang, P.L.F. Hemment
• p565 Defect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures?   [ 168 K ]
  Authors: Zsolt E. Horváth, S. Franchi, A. Bosacchi, P. Frigeri, E. Gombia, R. Mosca, Vo Van Tuyen
• p569 Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses   [ 251 K ]
  Authors: O.I. Velichko, V.A. Dobrushkin, A.K. Fedotov, V.A. Tsurko