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Defects and Diffusion in Semiconductors IV

Defect and Diffusion Forum Volumes 200 - 202

• Papers
• Abstracts

• p161 Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe   [ 579 K ]
  Authors: M. Mamor, F.D. Auret, S.A. Goodman
• p177 Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si   [ 552 K ]
  Authors: R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H.J.L. Gossmann, C.S. Rafferty
• p189 Positron Annihilation Studies of Vacancy Defects in Crystalline and Amorphous Si   [ 1 M ]
  Authors: G. Amarendra
• p219 Modelling Cu Diffusion into a Ta Barrier   [ 252 K ]
  Authors: Chun Li Liu
• p225 Transmission Electron Microscopy of the Configuration of Cracks and the Defect Structure near to Cracks in Si   [ 1 M ]
  Authors: Hiroyasu Saka, Suprijadi
• p247 Study of the Localized Modes in ZnSe:P for the Elucidation of Site Symmetry   [ 428 K ]
  Authors: N. Sankar, K. Ramachandran
• p259 EBIC/XPS Study of Antimony Equilibrium Segregation at the Germanium Surface   [ 251 K ]
  Authors: N. Tabet