Polycrystalline Semiconductors VII
Solid State Phenomena Volume 93
-
p213
Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films
[
602 K
]
Authors: Mitsutoshi Miyasaka, Kenji Makihira, Tanemasa Asano, Béla Pécz, J. Stoemenos -
p219
High-Temperature Crystallization of Amorphous Silicon on a Molybdenum Substrate
[
550 K
]
Authors: Do Young Kim, Jae Kyung Ko, Joong Hyun Park, Utpal Gangopadhyay, Junsin Yi -
p225
Rapid Joule Heating with Metal Films Used to Crystallize Silicon Films
[
279 K
]
Authors: Y. Kaneko, Toshiyuki Sameshima -
p231
Low-Temperature Crystallization of Poly-SiGe Thin-Films by Solid Phase
Crystallization
[
276 K
]
Authors: Kouichi Nakahata, M. Isomura, K. Wakisaka -
p237
Influence of Thermal Electron Irradiation on Crystallization of a Growing Si Film on a Glass Substrate
[
63 K
]
Authors: Susumu Horita, Seiji Miyoshi, Osamu Jaike -
p243
Solution Growth of Polycrystalline Silicon on Quartz Glass Substrates
[
297 K
]
Authors: Rui Kamada, Ching-ju Wen, Junichiro Otomo, Hiroshi Takahashi -
p249
Crystal Structure Analysis of Spherical Silicon Using X-Ray Pole Figures
[
349 K
]
Authors: S. Omae, C. Okamoto, H. Takakura, Y. Hamakawa, Mikio Murozono -
p257
Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control
[
3 M
]
Authors: Pere Roca i Cabarrocas, Anna Fontcuberta i Morral, Billel Kalache, Samir Kasouit -
p269
Self-Limiting Formation and Optical Properties of Hemispherical Grains of
Microcrystalline Silicon on an Amorphous Silicon Film Surface
[
393 K
]
Authors: Housei Akazawa -
p275
Low-Temperature Formation of Si-Nanocrystal Dots from Chlorinated Materials by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition and Optical Properties
[
280 K
]
Authors: Hajime Shirai, Toru Tsukamoto, Ken-ichi Kurosaki
