Polycrystalline Semiconductors VII
Solid State Phenomena Volume 93
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p345
Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices
[
927 K
]
Authors: Toshio Kamiya, Yoshikazu Furuta, Yong-Tsong Tan, Z.A.K. Durrani, Hiroshi Mizuta, Haroon Ahmed -
p351
Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current
[
180 K
]
Authors: N. Sakitani, K. Nishioka, T. Yagi, Y. Yamamoto, Yukari Ishikawa, Yukiharu Uraoka, Takashi Fuyuki -
p355
Study on Grain Boundary Formation in a Si Film Crystallized by Laser-Induced Periodic Temperature Distribution with a High Incident Angle
[
350 K
]
Authors: H. Kaki, Y. Nakata, Susumu Horita -
p361
Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation
[
264 K
]
Authors: J. Kikkawa, J. Yamasaki, Y. Ohno, Masanori Kohyama, S. Takeda -
p367
Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs
[
246 K
]
Authors: N. Kawasaki, T. Yoshimura, Masayoshi Tonouchi, M. Tani, Kazufumi Sakai, H. Katahama -
p375
Atomistic Simulation Study of Dislocations and Grain Boundaries in Nanoscale Semiconductors
[
306 K
]
Authors: Kinichi Masuda-Jindo, R. Kikuchi, Seizo Obata, M. Menon -
p381
Molecular Dynamics Studies of Crystallization and Grain Boundary Formation in Silicon
[
396 K
]
Authors: Hiroshi Fukushima, Kenjiro Sugio -
p387
Theoretical Study of the Atomic and Electronic Structure of Grain Boundaries in SiC
[
379 K
]
Authors: Masanori Kohyama, Koji Tanaka -
p393
First-Principles Calculation of 3C-SiC(111)/Al Nano-Hetero Polar Interfaces
[
308 K
]
Authors: Shingo Tanaka, Masanori Kohyama -
p399
A Simple Method to Extract the Diffusion Length from the Output Parameters of Solar Cells - Application to Polycrystalline Silicon
[
76 K
]
Authors: K. Taretto, U. Rau, Thomas A. Wagner, Jens Werner
