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Gettering and Defect Engineering in Semiconductor Technology X

Solid State Phenomena Volumes 95 - 96

• Papers
• Abstracts

• p71 Optimized Parameters for Modeling Oxygen Nucleation in Silicon   [ 280 K ]
  Authors: Markus Zschorsch, Robert Hölzl, Herbert Rüfer, Hans Joachim Möller, Wilfried von Ammon
• p77 Oxygen Ion Bombardment for Local Oxide Formation in Si   [ 1 M ]
  Authors: D. Krüger, R. Kurps, P. Formanek, G. Weidner
• p83 Nitrogen Diffusion and Interaction with Oxygen in Si   [ 100 K ]
  Authors: Vladimir Voronkov, Robert Falster
• p93 Structure and Electronic Properties of Nitrogen Defects in Silicon   [ 323 K ]
  Authors: R. Jones, I. Hahn, J.P. Goss, Patrick R. Briddon, Sven Öberg
• p99 Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics   [ 166 K ]
  Authors: F. Sahtout Karoui, A. Karoui, George A. Rozgonyi, M. Hourai, K. Sueoka
• p105 Processing and Characterization of 300 mm Argon-Annealed Wafers   [ 2 M ]
  Authors: Timo Müller, E. Daub, H. Yokota, R. Wahlich, P. Krottenthaler, Wilfried von Ammon
• p111 Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon   [ 433 K ]
  Authors: De Ren Yang, Hong Jie Wang, Xuegong Yu, Xiang Yang Ma, Duan Lin Que
• p117 Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors   [ 60 K ]
  Authors: Vladimir Voronkov, A.V. Batunina, G.I. Voronkova, Robert Falster
• p123 Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability   [ 88 K ]
  Authors: Leonard C. Feldman, G. Lüpke, N.H. Tolk
• p129 Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon   [ 364 K ]
  Authors: T. Mchedlidze, Masashi Suezawa