Gettering and Defect Engineering in Semiconductor Technology X
Solid State Phenomena Volumes 95 - 96
doi:10.4028/3-908450-82-9
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p289
Luminescence of Silicon Implanted with Phosphorus
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932 K
]
Authors: T. Arguirov, Martin Kittler, Winfried Seifert, D. Bolze, K.-E. Ehwald, P. Formanek, Jürgen Reif -
p297
Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices
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735 K
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Authors: Frédéric Cayrel, Daniel Alquier, Laurent Ventura, Leo Vincent, F. Roqueta, Christiane Dubois, Robert Jérisian -
p307
Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment
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1 M
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Authors: C.L. Liu, E. Ntsoenzok, Marie France Barthe, P. Desgardin, S. Ashok, A. Vengurlekar, Daniel Alquier, M.O. Ruault -
p313
Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium
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751 K
]
Authors: Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, Jadwiga Bak-Misiuk -
p319
Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures
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245 K
]
Authors: Marie-Laure David, Marie France Beaufort, Jean François Barbot -
p325
Doping Effect of Helium Induced Nanocavities in Silicon
[
98 K
]
Authors: Frédéric Cayrel, Laurent Ventura, Daniel Alquier, Fabrice Roqueta, Robert Jérisian -
p331
LACBED Investigations of High Energy Helium Implanted into 4H-SiC
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1 M
]
Authors: Marie France Beaufort, F. Pailloux, Jean François Barbot -
p337
Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon
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4 M
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Authors: C.L. Liu, Daniel Alquier, Frédéric Cayrel, E. Ntsoenzok, M.O. Ruault -
p343
Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
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820 K
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Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Artem Shalimov, Jacek Ratajczak, Barbara Surma, G. Gawlik -
p351
Two Dimensional Interstitial Diffusion in Mesoscopic Structures
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729 K
]
Authors: Filippo Giannazzo, Vito Raineri, S. Mirabella, D. De Salvador, E. Napolitani, F. Priolo
