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Gettering and Defect Engineering in Semiconductor Technology X

Solid State Phenomena Volumes 95 - 96

• Papers
• Abstracts

• p433 Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon   [ 74 K ]
  Authors: M. Badylevich, Yu.L. Iunin, Vitaly Kveder, Valeri I. Orlov, Yu. Osipyan
• p439 Dislocation Generation in Device Fabrication Process   [ 204 K ]
  Authors: Isabella Mica, Maria-Luisa Polignano, G.P. Carnevale, A. Armigliato, R. Balboni, M. Brambilla, F. Cazzaniga, G. Pavia, V. Soncini
• p447 Microstructural and Electrical Properties of NiSi₂ Precipitates at Dislocations in Silicon   [ 513 K ]
  Authors: Michael Seibt, Vitaly Kveder
• p453 Electrical and Optical Properties of Dislocations Generated under Pure Conditions   [ 64 K ]
  Authors: Maurizio Acciarri, Simona Binetti, O.V. Feklisova, E.A. Steinman, E.B. Yakimov
• p459 Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors   [ 66 K ]
  Authors: B.V. Petukhov
• p465 Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon   [ 67 K ]
  Authors: Valeri I. Orlov, Yu.L. Iunin, M. Badylevich, O. Lysytskiy, Hans Richter
• p473 Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods   [ 1 M ]
  Authors: P. Zaumseil, D. Krüger, R. Kurps, O.V. Fursenko, P. Formanek
• p483 Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?   [ 300 K ]
  Authors: Joerg Weber, J. Bollmann, S. Knack, V. Kotestki, H.E. Mahnke, E. Welter
• p489 Measurement of Nitrogen Concentration in Cz Silicon Crystals   [ 226 K ]
  Authors: N. Inoue, A. Hashimoto, K. Shingu, K. Masumoto
• p495 Gold Diffusion as a Tool for Defect Characterization in Si   [ 304 K ]
  Authors: O.V. Feklisova, E.B. Yakimov