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Gettering and Defect Engineering in Semiconductor Technology X

Solid State Phenomena Volumes 95 - 96

• Papers
• Abstracts

• p501 Infrared Transmission Investigations of Rod - Like Defects in Multicrystalline Silicon   [ 491 K ]
  Authors: Alexander Lawerenz, Michael Ghosh, K. Kremmer, V. Klemm, Armin Müller, Hans Joachim Möller
• p507 Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal   [ 62 K ]
  Authors: N.Yu. Arutyunov, R. Krause-Rehberg
• p513 Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy   [ 854 K ]
  Authors: Simona Kouteva-Arguirova, Valeri I. Orlov, Winfried Seifert, Jürgen Reif, Hans Richter
• p519 Investigation of Semiconductors by Nanoindentation   [ 758 K ]
  Authors: Asta Richter, Bodo Wolf, Joseph BelBruno
• p527 Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation   [ 125 K ]
  Authors: Wolfgang Schröter, A. Döller, A. Zozime, Vitaly Kveder, Michael Seibt, E. Spiecker
• p539 Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities   [ 596 K ]
  Authors: Mohammad B. Shabani, Y. Shiina, Y. Shimanuki
• p547 Gettering Strategies for SOI Wafers   [ 322 K ]
  Authors: Andrei A. Istratov, W. Huber, Eicke R. Weber
• p553 Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon   [ 494 K ]
  Authors: Andreas Sattler, Michael Seibt, Vitaly Kveder, Wolfgang Schröter
• p559 Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation   [ 84 K ]
  Authors: Pavel Hazdra, Jan Vobecký
• p565 Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon   [ 64 K ]
  Authors: I.V. Antonova, Andrzej Misiuk, Adam Barcz, Di Sheng Yang, V.P. Popov