A Discrete Dislocation Plasticity Model of Creep in Polycrystalline Thin Films

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Defect and Diffusion Forum (Volumes 224-225)

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107-126

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December 2003

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[31] M. Buehler, A. Hartmaier, H. Gao, Hierarchical multi-scale modeling of plasticity of submicron thin metal films, submmitted to Modelling Simulation Mater. Sci. Eng., 2003. 166 Appendix The tensor Gijk as it is employed in this work to calculate the stress field of a dislocation in an infinite bi-material is listed here. The formulation has been adapted from the works of Mura [23] and Gutkin and Romanov [27]. G111 = D � 6(x2 − d) r2 − − 4(x2 − d)3 r4 − − (5A + B)x2 +9(A + B)d r2 + + 4A(x2 + d)(3d2 +10dx2 + x2 2) r4 + − 32Adx2(x2 + d)3 r6 + � G112 = D� − 2x1 r2 − + 4x1(x2 − d)2 r4 − + (3A − B)x1 r2 + + 4Ax1(3d2 +4dx2 − x2 2) r4 + − 32Adx1x2(x2 + d)2 r6 + � G221 = D� − 2(x2 − d) r2 − + 4(x2 − d)3 r4 − + (A + B)x2 − (3A − B)d r2 + + 4A(x2 + d)(d2 − 6dx2 − x2 2) r4 + + 32Adx2(x2 + d)3 r6 + � G222 = D� − 2x1 r2 − − 4x1(x2 − d)2 r4 − + (A + B)x1 r2 + + 4Ax1(d2 + x2 2) r4 + + 32Adx1x2(x2 + d)2 r6 + � G121 = D� − 2x1 r2 − + 4x1(x2 − d)2 r4 − + (A + B)x1 r2 + − 4Ax1(d2 +4dx2 + x2 2) r4 + + 32Adx1x2(x2 + d)2 r6 + � 17G122 = D� − 2(x2 − d) r2 − + 4(x2 − d)3 r4 − + (3A − B)x2 − (A + B)d r2 + + 4A(x2 + d)(d2 +6dx2 − x2 2) r4 + − 32Adx2(x2 + d)3 r6 + � G211 = G121 ,G212 = G122 The constant D is defined as D = µ1/[4π (1 − ν1)], with µ1 and ν1 being shear modulus and Poisson ratio of that part of the bi-material containing dislocations. The other part of the bi-material is regarded as dislocation-free in our treatment. The variable d denotes the distance to the bi-material interface. The following abbreviations are used: A =(1− Γ)/(1 + k1Γ) ,B=(k2 − k1Γ)/(k2 +Γ) Γ=µ2/µ1 ,ki =3− 4νi ,i=1, 2 r2 ± = x2 1 +(x2 ± d)2 . 18E (GPa) νb(nm) B (Pa s) η 114.0 0.33 0.26 10−4 100 Table 1 Material parameters employed in the discrete dislocation simulations, where E is the Young's modulus, ν the Poisson ratio, b the norm of Burgers vector, and B the phonon drag coefficient. These values mimic material properties of copper. The ratio between glide and climb mobility is denoted by η. 192x 1x σ0 1 ν, 1E f 2 h , 2νE Fig. 1. Geometry of a thin film with thickness hf on an infinite substrate. Film and substrate can have different elastic moduli E and ν. Under and applied tensile stress σ0 dislocations with Burgers vector parallel to the x1-axis climb down the grain boundary (black) which causes nucleation of parallel glide dislocations (grey) of the same Burgers vector. s∆ , ,ν11 2 h b f 2ν E E b Fig. 2. The layer of virtual boundary dislocations with Burgers vectors ˆb on the thin film geometry as shown in Figure 1. The surface is discretized into segments of length ∆s. The schematic is drawn for a dislocation configuration with arbitrary Burgers vectors b, represented here by a single dislocation. 2002 04 06 0 t (ns) 0 1 2 3 σ11 (GPa) A C B σinf 0 100 200 300 400 x1 (nm) 0 50 100 150 x2 (nm) A 0 100 200 300 400 x1 (nm) 0 50 100 150 x2 (nm) B 0 100 200 300 400 x1 (nm) 0 50 100 150 x2 (nm) C Fig. 3. Relaxation of the applied stress by diffusional creep to a constant level σinf (top). The three inserts at the bottom show the dislocation configuration at the times indicated in the stress-time diagram. 210 1 02 03 0 dsrc (nm) 1.0 1.2 1.4 1.6 1.8 2.0 σinf (GPa) hf = 30nm hf = 150nm hf = 300 nm Fig. 4. The flow stress σinf, after relaxation by grain boundary diffusion without parallel glide dislocations as a function of the distance of the nucleation site from the film surface. Three different film thicknesses as given in the legend have been investigated. 0 10203040 1µm / h 0.0 0.5 1.0 1.5 2.0 σinf (GPa) (a) dsrc = 2.6 nm (a) dsrc = 0.1 h (b) dsrc = 2.6 nm (b) dsrc = 0.1 h Fig. 5. Flow stress versus inverse film thickness for different climb dislocation nucleation criteria and grain boundary treatments, as given in the legend: (a) stands for absorbing grain boundaries, and (b) for blocking grain boundaries. Different locations dsrc of the climb dislocation sources have been investigated. 221 10 100 1000 η 0.00 0.25 0.50 0.75 1.00 σinf (GPa) Fig. 6. The influence of the ratio η of glide and climb mobilities on the flow stress of a film of thickness hf = 30 nm with a dislocation source at dsrc =0.26 nm is practically negligible. 23

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