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Ultra Clean Processing of Silicon Surfaces VII

Solid State Phenomena Volumes 103 - 104

• Papers
• Abstracts

• p87 Occurrence of Arsenic-Based Defects and Techniques for Their Elimination   [ 528 K ]
  Authors: Felicia Goh, Christopher Lim, Vincent Sih, Zainab Ismail, Simon Y.M. Chooi
• p93 Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks   [ 1 M ]
  Authors: M. Claes, Vasile Paraschiv, S. Beckx, M. Demand, W. Deweerd, Sylvain Garaud, H. Kraus, Rita Vos, J. Snow, Werner Boullart, Stefan De Gendt
• p97 HF Based Solutions for HfO₂ Removal; Effect of pH and Temperature on HfO₂: SiO₂ Etch Selectivity   [ 24 M ]
  Authors: Vasile Paraschiv, M. Claes, Mikhail R. Baklanov, Werner Boullart, Stefan De Gendt, Serge Vanhaelemeersch
• p103 Selective Si₃N₄ Etch in Single Wafer Application   [ 228 K ]
  Authors: D. Martin Knotter, Nigel Stewart, Ian Sharp
• p107 Etch Rate Depth Profiling by Single Wafer Etching Equipment   [ 196 K ]
  Authors: Enrico Bellandi, A. Elbaz, Rosella Piagge, Francesco Pipia, Mauro Alessandri
• p111 Novel Chemical Etching to Correct Film Thickness Distributions   [ 475 K ]
  Authors: Hajime Ugajin, Hayato Iwamoto, Kei Kinoshita
• p115 Etching of Silicon Oxide Films in Supercritical Carbon Dioxide   [ 94 K ]
  Authors: Koichiro Saga, Hitoshi Kuniyasu, Takeshi Hattori, Kenji Yamada, Tomoyuki Azuma
• p121 Challenges of Finer Particle Detection on Bulk-Silicon and SOI Wafers   [ 395 K ]
  Authors: Takeshi Hattori, Akira Okamoto, Hitoshi Kuniyasu
• p129 The Impact of Backside Particles on the Limits of Optical Lithography   [ 16 M ]
  Authors: Twan Bearda, Paul W. Mertens, Frank Holsteyns, Peter De Bisschop, René Compen, Aschwin van Meer, Marc M. Heyns
• p133 Inspection Challenges at the 45nm Technology Node   [ 298 K ]
  Authors: David Shortt, Lisa Cheung