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Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface

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Abstract:

We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the ntype Si(100) wafers. The diffusion profiles of this kind are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the layers of microdefects, which are produced by previous oxidation. These layers appear to be passivated during short-time diffusion of boron thereby forming neutral d - barriers. The fractal type selfassembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which represents the system of microcavities embedded in the quantum well plane.

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Diffusion in Materials - DIMAT2004 View Preview

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Periodical:

Defect and Diffusion Forum (Volumes 237-240)

Pages:

1049-1054

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.237-240.1049

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Cite this paper

Online since:

April 2005

Authors:

Nikolai T. Bagraev, A.D. Bouravleuv, W. Gehlhoff, L.E. Klyachkin, A.M. Malyarenko, V.V. Romanov, S.A. Rykov

Keywords:

Impurity Diffusion, Self-Interstitial, Silicon, Ultra-Shallow Diffusion Profile, Vacancy

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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