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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

• Papers
• Abstracts

• p761 SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions   [ 262 K ]
  Authors: A.M. Emel'yanov, N.A. Sobolev, T.M. Mel'nikova, N.V. Abrosimov
• p767 Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon   [ 647 K ]
  Authors: E.A. Steinman, A.N. Tereshchenko, Valeri I. Orlov, F.G. Kirscht
• p773 Dislocation Related PL of Multi-Step Annealed Cz-Si Samples   [ 730 K ]
  Authors: E.A. Steinman, A.N. Tereshchenko, V.I. Vdovin, Andrzej Misiuk
• p779 Defect Formation in MBE Er-Doped Si Light-Emitting Structures   [ 9 M ]
  Authors: V.I. Vdovin, N.A. Sobolev, D.V. Denisov, E.I. Shek
• p787 Atomistic Nanodevice Simulation   [ 37 K ]
  Authors: Michel Lannoo
• p789 Interfacing Biology with Electronic Devices   [ 788 K ]
  Authors: Andreas Offenhäusser, Sven Ingebrandt, Dirk Mayer
• p797 Thin SiGe Relaxed Buffer for Strain Adjustment   [ 233 K ]
  Authors: Erich Kasper, Klara Lyutovich