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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

• Papers
• Abstracts

• p261 Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies   [ 214 K ]
  Authors: L.I. Khirunenko, Yu.V. Pomozov, N.A. Tripachko, M.G. Sosnin, A. Duvanskii, L.I. Murin, J. Lennart Lindström, S.B. Lastovskii, L.F. Makarenko, V.P Markevich, A.R. Peaker
• p267 VO_n (n≥3) Defects in Irradiated and Heat-Treated Silicon   [ 181 K ]
  Authors: L.I. Murin, J. Lennart Lindström, B.G. Svensson, V.P Markevich, A.R. Peaker, Charalamos A. Londos
• p273 Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon   [ 112 K ]
  Authors: V.P Markevich, L.I. Murin, S.B. Lastovskii, I.F. Medvedeva, J. Lennart Lindström, A.R. Peaker, João A.P. Coutinho, R. Jones, Vitor J.B. Torres, Sven Öberg, Patrick R. Briddon
• p279 Impact of Hydrogenation on Electrical Properties of NiSi₂ Precipitates in Silicon   [ 257 K ]
  Authors: O.F. Vyvenko, N.V. Bazlov, M.V. Trushin, A.A. Nadolinski, Michael Seibt, Wolfgang Schröter, George T. Hahn
• p285 On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers   [ 522 K ]
  Authors: Eddy Simoen, G. Eneman, Sheron Shamuilia, V. Simons, Eugenijus Gaubas, R. Delhougne, R. Loo, K. De Meyer, C. Claeys
• p291 Novel Low-K Dielectric Obtained by Xenon Implantation in SiO₂   [ 3 M ]
  Authors: H. Assaf, E. Ntsoenzok, M.O. Ruault, O. Kaïtasov
• p297 Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth   [ 24 M ]
  Authors: Carole Bigot, Adrien Danel, S. Thevenin
• p303 Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon   [ 1 M ]
  Authors: N. Cherkashin, Martin J. Hÿtch, Fuccio Cristiano, A. Claverie
• p309 Impact of Hydrogen Implantation on Helium Implantation Induced Defects   [ 1 M ]
  Authors: G. Gaudin, Frédéric Cayrel, Corrado Bongiorno, Robert Jérisian, Vito Raineri, Daniel Alquier
• p315 Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons   [ 155 K ]
  Authors: V. Khomenkov, D. Bisello, M. Boscardin, Mara Bruzzi, A. Candelori, G.-F. Dalla Betta, A.P. Litovchenko, C. Piemonte, R. Rando, F. Ravotti, N. Zorzi