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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

• Papers
• Abstracts

• p385 Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside   [ 37 M ]
  Authors: Mohammad B. Shabani, K. Hirano, Y. Shiina, T. Kihara, T. Shingyoji
• p395 Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si   [ 852 K ]
  Authors: Filippo Giannazzo, E. Bruno, S. Mirabella, G. Impellizzeri, E. Napolitani, Vito Raineri, F. Priolo, Daniel Alquier
• p401 Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters   [ 805 K ]
  Authors: Yuri A. Astrov, L.M. Portsel, A.N. Lodygin, V.B. Shuman, E.V. Beregulin
• p407 Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon   [ 24 M ]
  Authors: N. Fujita, R. Jones, J.P. Goss, Thomas Frauenheim, Patrick R. Briddon, Sven Öberg
• p413 General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals   [ 195 K ]
  Authors: Vasilii E. Gusakov
• p419 Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability   [ 215 K ]
  Authors: Pavel Hazdra, Jan Vobecký
• p425 Defect Interaction Mechanisms between Antimony and Indium in Silicon   [ 286 K ]
  Authors: M.M. De Souza, Srinivasan Chakravarthi, Amitabh Jain
• p433 Formation of Vacancies and Divacancies in Plane-Stressed Silicon   [ 180 K ]
  Authors: S. Nicolaysen, Mariya G. Ganchenkova, Risto M. Nieminen
• p439 Selective SiGe Etching Formed by Localized Ge Implantation on SOI   [ 623 K ]
  Authors: Helene Bourdon, Claire Fenouillet-Béranger, Claire Gallon, Philippe Coronel, Damien Lenoble
• p445 Impact of the Growth Parameters on the Structural Properties of Si_0.8Ge_0.2 Virtual Substrates   [ 311 K ]
  Authors: Y. Bogumilowicz, J.M. Hartmann, F. Laugier, G. Rolland, Thierry Billon