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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

• Papers
• Abstracts

• p451 Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method   [ 318 K ]
  Authors: M. Imai, Y. Miyamura, D. Murata, A. Ogi
• p457 The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures   [ 207 K ]
  Authors: Mariya G. Ganchenkova, V.A. Borodin, S. Nicolaysen, Risto M. Nieminen
• p463 Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates   [ 550 K ]
  Authors: Klara Lyutovich, Erich Kasper, Michael Oehme, Jens Werner, Tatiana Perova
• p469 Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS   [ 33 M ]
  Authors: A. Evtukh, A. Kizjak, V.G. Litovchenko, C. Claeys, Eddy Simoen
• p477 Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures   [ 265 K ]
  Authors: I.E. Tyschenko, K.S. Zhuravlev, A.G. Cherkov, Andrzej Misiuk, V.P. Popov
• p483 Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication   [ 9 M ]
  Authors: V.I. Vdovin, M.G. Mil'vidskii, M.M. Rzaev, Friedrich Schäffler
• p489 Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures   [ 199 K ]
  Authors: I.V. Antonova, L.L. Golik, M.S. Kagan, V.I. Polyakov, A.I. Rukavischnikov, N.M. Rossukanyi, J. Kolodzey
• p497 The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon   [ 174 K ]
  Authors: Daniel Macdonald, Prakash N.K. Deenapanray, Andres Cuevas, S. Diez, Stephan W. Glunz
• p503 Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties   [ 8 M ]
  Authors: S.K. Brantov, Vitaly Kveder, N.N. Kuznetzov, Valeri I. Orlov
• p509 Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers   [ 556 K ]
  Authors: A.E. Belyaev, O. Polupan, W. Dallas, Sergei S. Ostapenko, D. Hess, John Wohlgemuth