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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

• Papers
• Abstracts

• p577 Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon   [ 467 K ]
  Authors: T. Buonassisi, Andrei A. Istratov, M.A. Marcus, Matthias Heuer, M.D. Pickett, B. Lai, Z. Cai, Steve M. Heald, Eicke R. Weber
• p585 Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon   [ 189 K ]
  Authors: Olivier Palais, Mustapha Lemiti, Jean-Francois Lelievre, Santo Martinuzzi
• p591 Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR   [ 193 K ]
  Authors: M. Porrini, Ivo Crössmann, M.G. Pretto, R. Scala, Reinhard Wolf
• p597 Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization   [ 525 K ]
  Authors: Thomas Steinegger, M. Naumann, F.G. Kirscht
• p603 Potential and Limitations of Electron Holography in Silicon Research   [ 918 K ]
  Authors: P. Formanek, Martin Kittler
• p609 Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon   [ 20 M ]
  Authors: N. Inoue, M. Nakatsu, K. Tanahashi, Hiroshi Yamada-Kaneta, Haruhiko Ono, V.D. Akhmetov, O. Lysytskiy, Hans Richter
• p615 Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal   [ 232 K ]
  Authors: N.Yu. Arutyunov, Valentin V. Emtsev
• p621 Infrared Absorption Measurement of Carbon Concentration down to 1x10¹⁴/cm³ in CZ Silicon   [ 224 K ]
  Authors: N. Inoue, M. Nakatsu
• p627 EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon   [ 2 M ]
  Authors: Jinggang Lu, George A. Rozgonyi, James Rand, Ralf Jonczyk
• p631 The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction   [ 1009 K ]
  Authors: Matthias Stockmeier, Matthias Weisser, Rainer Hock, Andreas Magerl