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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

• Papers
• Abstracts

• p65 Effect of Various Treatments on Light Emission Properties of Si-Rich-SiO_x Structures   [ 131 K ]
  Authors: M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski
• p71 Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon   [ 155 K ]
  Authors: A.L. Quintos Vasques, T.V. Torchynska, G. Polupan, Y. Matsumoto, L. Khomenkova, L.V. Shcherbyna
• p77 Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography   [ 2 M ]
  Authors: Nelly Burle, Bernard Pichaud, V.I. Vdovin, M.M. Rzaev
• p83 Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers   [ 285 K ]
  Authors: I.V. Antonova, M.B. Gulyaev, R.A. Soots, V.A. Seleznev, V.Ya. Prinz
• p89 Configuration of DV Complexes In Ge: Positron Probing of Ion Cores   [ 183 K ]
  Authors: N.Yu. Arutyunov, Valentin V. Emtsev, E. Sayed, R. Krause-Rehberg
• p95 Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p⁺/n Si_1-XGe_x Source/Drain Junctions   [ 422 K ]
  Authors: M. Kamruzzaman Chowdhury, B. Vissouvanadin, M. Bargallo Gonzalez, N. Bhouri, P. Verheyen, H. Hikavyy, O. Richard, J. Geypen, H. Bender, R. Loo, C. Claeys, Eddy Simoen, V. Machkaoutsan, P. Tomasini, S.G Thomas, J.P. Lu, J.W. Weijtmans, R. Wise
• p101 Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium   [ 1 M ]
  Authors: Marie-Laure David, Frédéric Pailloux, Michèl Drouet, Marie France Beaufort, Jean François Barbot, Eddy Simoen, C. Claeys
• p107 Co-Germanide Schottky Contacts on Ge   [ 6 M ]
  Authors: Luc Lajaunie, Marie-Laure David, K. Opsomer, Eddy Simoen, C. Claeys, Jean François Barbot
• p113 Internal Dissolution of Buried Oxide in SOI Wafers   [ 869 K ]
  Authors: Oleg Kononchuk, Francois Boedt, Frederic Allibert
• p119 Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs   [ 176 K ]
  Authors: H. Ohyama, K. Takakura, T. Nagano, M. Hanada, S. Kuboyama, Eddy Simoen, C. Claeys