HOME CONTACT

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

• Papers
• Abstracts

• p125 Vacancy Clusters in Germanium   [ 264 K ]
  Authors: A.R. Peaker, V.P Markevich, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, Eddy Simoen, I. Capan, B. Pivac, R. Jačimović
• p131 Formation of Hydrogen-Related Shallow Donors in Ge_1-xSi_x Crystals Implanted with Protons   [ 209 K ]
  Authors: Ju.M. Pokotilo, A.N. Petukh, V.V. Litvinov, V.P Markevich, N.V. Abrosimov, A.R. Peaker
• p137 Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure   [ 1 M ]
  Authors: I.E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
• p143 SiGe Heterostructures-on-Insulator Produced by Ge⁺-Ion Implantation and Subsequent Hydrogen Transfer   [ 427 K ]
  Authors: I.E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
• p149 Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium   [ 510 K ]
  Authors: Eugenijus Gaubas, Jan Vanhellemont
• p155 Impact of NiSi₂ Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon   [ 395 K ]
  Authors: M.V. Trushin, O.F. Vyvenko, Michael Seibt
• p161 Oxygen Dimers and Related Defects in Plastically Deformed Silicon   [ 24 M ]
  Authors: Nikolai Yarykin
• p167 Enhanced Oxygen Precipitation during the Czochralski Crystal Growth   [ 786 K ]
  Authors: Lukas Válek, Jan Šik, David Lysáček
• p175 Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si   [ 207 K ]
  Authors: Vitaly V. Kveder, Valeri I. Orlov, M. Khorosheva, Michael Seibt
• p183 Detection of Nickel in Silicon by Recombination Lifetime Measurements   [ 147 K ]
  Authors: Hele Savin, Marko Yli-Koski, A. Haarahiltunen, H. Talvitie, Juha Sinkkonen