HOME CONTACT

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

• Papers
• Abstracts

• p189 Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors   [ 209 K ]
  Authors: T.D Dzhafarov, S. Aydin, D. Oren
• p195 SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon   [ 8 M ]
  Authors: A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, E.I. Rau, A.V. Mazanik, N.V. Frantskevich
• p201 Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing   [ 266 K ]
  Authors: Pavel Hazdra, Volodymyr V. Komarnitskyy
• p207 Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon   [ 199 K ]
  Authors: N. Inoue, Y. Goto, T. Sugiyama
• p213 Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon   [ 447 K ]
  Authors: A.N. Tereshchenko, E.A. Steinman
• p219 Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping   [ 159 K ]
  Authors: Vladimir Voronkov, Robert Falster
• p225 The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation   [ 442 K ]
  Authors: R. Jones
• p233 Fundamental Interactions of Fe in Silicon: First-Principles Theory   [ 403 K ]
  Authors: Stefan K. Estreicher, Mahdi Sanati, N. Gonzalez Szwacki
• p241 First Principles Calculations of the Formation Energy of the Neutral Vacancy in Germanium   [ 142 K ]
  Authors: P. Śpiewak, Krzysztof J. Kurzydłowski, K. Sueoka, Igor Romandic, Jan Vanhellemont
• p247 First-Principles Simulations of Frenkel Pair Formation and Annealing in Irradiated ß-SiC   [ 291 K ]
  Authors: Laurent Pizzagalli, Guillaume Lucas