Gettering and Defect Engineering in Semiconductor Technology XII
Solid State Phenomena Volumes 131 - 133
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p253
Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation
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360 K
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Authors: A. Carvalho, R. Jones, C. Janke, Sven Öberg, Patrick R. Briddon -
p259
A Theoretical Study of Copper Contaminated Dislocations in Silicon
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1 M
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Authors: N. Fujita, R. Jones, Sven Öberg, Patrick R. Briddon, A.T. Blumenau -
p265
Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon
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180 K
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Authors: N. Fujita, R. Jones, T.A.G. Eberlein, Sven Öberg, Patrick R. Briddon -
p271
Effect of Hydrostatic Pressure on Self-Interstitial Diffusion in Si, Ge, Si
Crystals: Quantum-Chemical Simulations Ge [
153 K
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Authors: Vasilii E. Gusakov, V.I. Belko, N.N. Dorozhkin -
p277
Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation
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3 M
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Authors: Alberto Martinez-Limia, Peter Pichler, Christian Steen, Silke Paul, Wilfried Lerch -
p283
Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth
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952 K
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Authors: A.I. Prostomolotov, N.A. Verezub -
p289
Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology
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208 K
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Authors: Martin Kittler, M. Reiche, T. Arguirov, Teimuraz Mchedlidze, Winfried Seifert, O.F. Vyvenko, T. Wilhelm, X. Yu -
p293
Two Paths of Oxide Precipitate Nucleation in Silicon
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404 K
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Authors: G. Kissinger, J. Dabrowski, Andreas Sattler, Timo Müller, Wilfried von Ammon -
p303
Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
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330 K
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Authors: Teimuraz Mchedlidze, T. Arguirov, Martin Kittler, T. Hoang, J. Holleman, P. LeMinh, J. Schmitz -
p309
A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon
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3 M
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Authors: Heidi Nordmark, Alexander G. Ulyashin, John Charles Walmsley, Randi Holmestad
