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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

• Papers
• Abstracts

• p437 HREM Study of the Strain Field Induced by the Entrance of a Matrix Dislocation within the Coherent Twin GB in Ge.   [ 547 K ]
  Authors: Jany Thibault-Pénisson, Martin J. Hÿtch
• p443 Nanoscale Imaging of CaCu₃Ti₄O₁₂ Dielectric Properties: The Role of Surface Defects   [ 2 M ]
  Authors: Vito Raineri, Patrick Fiorenza, Raffaella Lo Nigro, Derek C. Sinclair
• p449 Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique   [ 2 M ]
  Authors: Takashi Sekiguchi, J. Chen, Masami Takase, Naoki Fukata, Naoto Umezawa, Kenji Ohmori, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe, Seiji Inumiya, Yasuo Nara
• p455 Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements   [ 957 K ]
  Authors: Hiroshi Yamada-Kaneta, Terutaka Goto, Yuichi Nemoto, Koji Sato, Masatoshi Hikin, Yasuhiro Saito, Shintaro Nakamura
• p461 Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiN_x Dielectrics   [ 208 K ]
  Authors: Sofia A. Arzhannikova, M.D. Efremov, V.A. Volodin, G.N. Kamaev, D.V. Marin, V.S. Shevchuk, S.A. Kochubei, A.A. Popov, Yu. A. Minakov
• p467 Silicon Epitaxial Layers for CCD and CMOS Imager Sensors : Limits and Challenges of the In-Line and Off-Line Metal Detection Techniques   [ 294 K ]
  Authors: G. Borionetti, S. Cox, P. Godio, I. Gohar, J. Pitney, M. Seacrist
• p473 New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure   [ 197 K ]
  Authors: Federico Boscherini, D. De Salvador, G. Bisognin, G. Ciatto
• p479 Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates   [ 166 K ]
  Authors: V.A. Volodin, M.D. Efremov, G.A. Kachurin, S.A. Kochubei, A.G. Cherkov, M. Deutschmann, N. Baersch
• p485 DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE   [ 626 K ]
  Authors: Łukasz Gelczuk, Grzegorz Jóźwiak, Marcin Motyka, Maria Dąbrowska-Szata
• p491 Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy   [ 24 M ]
  Authors: Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri