Gettering and Defect Engineering in Semiconductor Technology XII
Solid State Phenomena Volumes 131 - 133
doi:10.4028/3-908451-43-4
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p497
Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation
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186 K
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Authors: Niki Mitromara, J.H. Evans-Freeman, Ray Duffy
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p503
Regular Dislocation Networks in Si. Part II: Luminescence
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1 M
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Authors: Teimuraz Mchedlidze, T. Wilhelm, X. Yu, T. Arguirov, G. Jia, M. Reiche, Martin Kittler
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p511
Mapping of Device Yield Relevant Electrical Si-Wafer Parameters
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618 K
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Authors: Kathrin Niemietz, Kay Dornich, Torsten Hahn, A. Helbig, Stefan Hellwig, Karl Heinz Stegemann, J.R. Niklas
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p517
Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties
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394 K
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Authors: Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, Vito Raineri, Maria Grazia Grimaldi
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p523
On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis
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1 M
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Authors: Benjamin Khong, Marc Legros, Philippe Dupuy, Colette Levade, Guy Vanderschaeve
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p529
EBIC Investigations of Deformation Induced Defects in Si
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235 K
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Authors: E.B. Yakimov
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p535
Growth and Properties of Silicon Nanowires for Low-Dimensional Devices
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3 M
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Authors: P. Werner
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p541
Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
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180 K
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Authors: I.V. Antonova, M.B. Gulyaev, V.A. Skuratov, D.V. Marin, E.V. Zaikina, Z.S. Yanovitskaya, J. Jedrzejewski, I. Balberg
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p547
Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.
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1 M
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Authors: Daniela Cavalcoli, Marco Rossi, Andrea Tomasi, Anna Cavallini, Danny Chrastina, Giovanni Isella
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p553
Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation
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420 K
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Authors: Naoki Fukata, T. Oshima, N. Okada, S. Matsushita, T. Tsurui, J. Chen, Takashi Sekiguchi, K. Murakami