HOME CONTACT

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

• Papers
• Abstracts

• p559 Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation   [ 1020 K ]
  Authors: Arthur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk
• p563 Erbium Doped Materials for a Si-Based Microphotonics   [ 33 M ]
  Authors: F. Priolo, G. Franzò, F. Iacona, A. Irrera, R. Lo Savio, M. Miritello, E. Pecora
• p571 Regular Dislocation Networks in Silicon. Part I: Structure   [ 33 M ]
  Authors: T. Wilhelm, Teimuraz Mchedlidze, X. Yu, T. Arguirov, Martin Kittler, M. Reiche
• p579 Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers   [ 292 K ]
  Authors: Sergeij G. Pavlov, Heinz Wilhelm Hübers, N.V. Abrosimov, H. Riemann
• p583 Dislocation Photoluminescence in Silicon and Germanium   [ 412 K ]
  Authors: S. Shevchenko, A.N. Tereshchenko
• p589 Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application   [ 288 K ]
  Authors: N.V. Abrosimov, N. Nötzel, H. Riemann, K. Irmscher, Sergeij G. Pavlov, Heinz Wilhelm Hübers, Ute Böttger, Philippe M. Haas, N. Drichko, M. Dressel
• p595 Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO₂ Layers   [ 259 K ]
  Authors: S. Prucnal, L. Rebohle, Wolfgang Skorupa
• p601 Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics   [ 165 K ]
  Authors: N.A. Sobolev
• p607 The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon   [ 382 K ]
  Authors: E.A. Steinman, A.N. Tereshchenko, N.V. Abrosimov
• p613 Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors   [ 228 K ]
  Authors: Sergeij G. Pavlov, Heinz Wilhelm Hübers, N.V. Abrosimov, H. Riemann, H.H. Radamson, N.A Bekin, A.N. Yablonsky, R.Kh. Zhukavin, Yu.N. Drozdov, V.N. Shastin