Paper Titles
Single Wafer Hydrophobic Surface Preparation on 300mm by HF Vapor
p.11
Insights into HF-Last Processes and Particle Performance in a Single Wafer Spin Cleaning Tool
p.15
Implementing an In Situ Surface Preparation Prior to Ni Deposition for Ni Salicide Processes
p.19
Electrical Impact of Various Arsenic-Residues Cleanings
p.23
Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor Cleaning
p.27
Passivation Studies of Germanium Surfaces
p.33
Germanium Surface Passivation Using Ozone Gaseous Phase
p.37
Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)
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Surface Microroughness of Silicon in Wet Process and its Minimization
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Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor Cleaning

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

27-30

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.27

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Online since:

November 2007

Authors:

Kang Heon Lee, John Ghekiere, Joon Bum Shim, Eric J. Bergman, Gyu Hyun Kim, Bai Kil Choi, Kee Joon Oh, Geun Min Choi

Keywords:

Dual Poly Gate, HF Vapor, Single Wafer, Tungsten Silicide

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] E. Kondoha, M.R. Baklanov, F. Jonckxa, K. Mae: Material Science in Semiconductor Processing 1, 1998, pp.107-117.

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[2] G.H. Kim, G.M. Choi, YW Song: Solid State Phenomena, 103-104, 2005, pp.67-70.

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