[1]
C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, W. A. de Heer, Electronic confinement and coherence in patterned epitaxial graphene, Science 312 (2006) 1191-1195.
DOI: 10.1126/science.1125925
Google Scholar
[2]
K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Rohrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, T. Seyller, Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nature Mater., 8 (2009) 203.
DOI: 10.1038/nmat2382
Google Scholar
[3]
C. Virojanadara, M. Syvajarvi, R. Yakimova, L.I. Johansson, A.A. Zakharov, T. Balasubramanian, Homogeneous large-area graphene layer growth on 6H-SiC(0001), Phys. Rev. B 78 (2008) 245403.
DOI: 10.1103/physrevb.78.245403
Google Scholar
[4]
N. Camara, J.-R. Huntzinger, G. Rius, A. Tiberj, N. Mestres, F. Pérez-Murano, P. Godignon, J. Camassel, Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC, Phys. Rev. B 80 (2009) 125410.
DOI: 10.1103/physrevb.80.125410
Google Scholar
[5]
K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, B. H. Hong, Large-scale pattern growth of graphene films for stretchable transparent electrodes, Nature 457 (2009) 706.
DOI: 10.1038/nature07719
Google Scholar
[6]
V. Raineri, C. Bongiorno, S. Di Franco, R. Lo Nigro, E. Rimini, F. Giannazzo, Surface corrugation and stacking misorientation in multilayers of graphene on Nickel, Solid State Phenomena, Vols. 178-179 (2011) pp.125-129
DOI: 10.4028/www.scientific.net/ssp.178-179.125
Google Scholar
[7]
X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, R. S. Ruoff, Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils, Science 324 (2009) 1312-1314.
DOI: 10.1126/science.1171245
Google Scholar
[8]
J. Wintterlin, M.-L. Bocquet, Graphene on metal surfaces, Surface Science 603 (2009) 1841–1852.
DOI: 10.1016/j.susc.2008.08.037
Google Scholar
[9]
P. W. Sutter, J.-I. Flege, E. A. Sutter, Epitaxial graphene on ruthenium, Nature Materials 7 (2008) 406-411.
DOI: 10.1038/nmat2166
Google Scholar
[10]
Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, Ph. Avouris, 100-GHz Transistors from Wafer-Scale Epitaxial Graphene, Science 327 (2010) 662.
DOI: 10.1126/science.1184289
Google Scholar
[11]
C. Vecchio, F. Giannazzo, S. Sonde, C. Bongiorno, M. Rambach, R. Yakimova, E. Rimini, V. Raineri, Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001), Nanoscale Research Letters 6 (2011) 269.
DOI: 10.1186/1556-276x-6-269
Google Scholar
[12]
S. Sonde, C. Vecchio, F. Giannazzo, C. Bongiorno, S. Di Franco, M. Rambach, E. Rimini, V. Raineri, Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001), Materials Science Forum Vols. 679-680 (2011) pp.797-800
DOI: 10.4028/www.scientific.net/msf.679-680.797
Google Scholar
[13]
S. Sonde, F. Giannazzo, V. Raineri, R. Yakimova, J.-R. Huntzinger, A. Tiberj, and J. Camassel, Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy, Phys. Rev. B 80 (2009) 241406(R).
DOI: 10.1103/physrevb.80.241406
Google Scholar
[14]
S. Sonde, F. Giannazzo, J.-R. Huntzinger, A. Tiberj, M. Syväjärvi,, R. Yakimova, V. Raineri and J. Camassel, Uniformity of Epitaxial Graphene on On-axis and Off-axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping, Materials Science Forum 645-648 (2010) 607-610.
DOI: 10.4028/www.scientific.net/msf.645-648.607
Google Scholar
[15]
S. Sonde, F. Giannazzo, V. Raineri, E. Rimini, Investigation of graphene–SiC interface by nanoscale electrical characterization, Phys. Status Solidi B 247 (2010) 912–915.
DOI: 10.1002/pssb.200982969
Google Scholar
[16]
S. Sonde, F. Giannazzo, C. Vecchio, R. Yakimova, E. Rimini, V. Raineri, Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas, Appl. Phys. Lett. 97 (2010) 132101.
DOI: 10.1063/1.3489942
Google Scholar
[17]
S. Sonde, C. Vecchio, F. Giannazzo, R. Yakimova, E. Rimini, V. Raineri, Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface, Materials Science Forum Vols. 679-680 (2011) pp.769-776
DOI: 10.4028/www.scientific.net/msf.679-680.769
Google Scholar
[18]
N. Camara, B. Jouault, A. Caboni, B. Jabakhanji, W. Desrat, E. Pausas, C. Consejo, N. Mestres, P. Godignon, J. Camassel, Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices, Appl. Phys. Lett. 97 (2010) 093107.
DOI: 10.1063/1.3480610
Google Scholar
[19]
A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, A. K. Geim, Raman Spectrum of Graphene and Graphene Layers, Phys. Rev. Lett. 97 (2006) 187401.
DOI: 10.1103/physrevlett.97.187401
Google Scholar
[20]
J. Röhrl, M. Hundhausen, K. V. Emtsev, T. Seyller, R. Graupner, L. Ley, Raman spectra of epitaxial graphene on SiC(0001), Appl. Phys. Lett. 92 (2008) 201918.
DOI: 10.1063/1.2929746
Google Scholar
[21]
F. Giannazzo, S. Sonde, V. Raineri, G. Patanè, G. Compagnini, F. Aliotta, R. Ponterio, and E. Rimini, Optical, morphological and spectroscopic characterization of graphene on SiO2, Phys. Status Solidi C 7 (2010) 1251-1255.
DOI: 10.1002/pssc.200982967
Google Scholar
[22]
F. Giannazzo, S. Sonde, V. Raineri, and E. Rimini, Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy, Nano Lett. 9 (2009) 23-29.
DOI: 10.1021/nl801823n
Google Scholar
[23]
S. Sonde, F. Giannazzo, V. Raineri, E. Rimini, Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide, J. Vac. Sci. Technol. B 27 (2009) 868-873.
DOI: 10.1116/1.3081890
Google Scholar
[24]
S. Y. Park, H. C. Floresca, Y. J. Suh, M. J. Kim, Electron microscopy analyses of natural and highly oriented pyrolytic graphites and the mechanically exfoliated graphenes produced from them, Carbon 48 (2010) 797–804.
DOI: 10.1016/j.carbon.2009.10.030
Google Scholar
[25]
J. C. Meyer, A. K. Geim, M. I. Katsnelson, K. S. Novoselov, D. Obergfell, S. Roth, C. Girit, A. Zettl, On the roughness of single- and bi-layer graphene membranes. Solid State Commun. 143 (2007) 101–109.
DOI: 10.1016/j.ssc.2007.02.047
Google Scholar
[26]
F. Giannazzo, P. Musumeci, L. Calcagno, A. Makhtari and V. Raineri, Mater. Sci. Semicond. Process., 4 (2001) 195.
Google Scholar
[27]
G. F. Sun, J. F. Jia, Q. K. Xue, L. Li, Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001), Nanotechnology 20 (2009) 355701.
DOI: 10.1088/0957-4484/20/35/355701
Google Scholar