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Ti Thickness Influence for Ti/Ni Ohmic Contacts on N-Type 3C-SiC
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Investigation of Al-Ti Ohmic Contact to N-Type 4H-SiC
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Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode
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MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications
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Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications
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Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN
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Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon
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Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications

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Abstract:

The formation of good Ohmic contacts to p-type silicon carbide (SiC) and gallium nitride (GaN) is an important physical and technological concern, because of the difficulty to find metals with low Schottky barriers to p-type wide band gap materials, and due to the high ionization energies of p-type dopant impurities. Typically, to overcome these issues, alloyed metallic compounds are used. In this work, the electrical properties of alloyed Ohmic contacts to p-type (Al-implanted) 4H-SiC and p-type (Mg-doped epilayers) GaN are presented and correlated with their microstructure. The impact of the surface preparation and annealing conditions are discussed, reporting the cases of Al/Ti contacts to p-SiC and Au/Ni contacts to p-GaN. The electrical characterization as a function of temperature allowed to define the dominant transport mechanism and to determine the barrier heights.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

203-207

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.203

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Online since:

January 2012

Authors:

Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Michał Leszczyński, Pawel Prystawko, Edoardo Zanetti, Mario Saggio, Vito Raineri

Keywords:

Ohmic Contact, p-Type GaN, p-Type SiC

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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