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GaN-on-Silicon Evaluation for High-Power MMIC Applications
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GaN-on-Silicon Evaluation for High-Power MMIC Applications

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Abstract:

Today microwave market has identified GaN-HEMT technology as a strategic enabling technology for next generation MMICs to be implemented in high performance RF sub-assemblies such as T/R Modules, Solid State Power Transmitters, Compact Receivers, High Speed Communications. To allow commercial market entry of GaN technology, a tradeoff between high RF performance and low cost is mandatory and a possible solution is represented by GaN-on-Silicon substrate. In this scenario the evaluation of FETs RF performance and losses of passive components are demanding to understand the feasibility of GaN MMIC on Si. Following such approach, in SELEX Sistemi Integrati a 4 inches GaN-on-Si wafer containing discrete active devices and passive components has been fabricated with the 50μm Si thickness. RF FETs performance demonstrates an output power of 4W/mm @ 3GHz, while passive components characterization exhibits similar behavior of GaN SiC passive elements up to C Band.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

223-227

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.223

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Online since:

January 2012

Authors:

Alessio Pantellini, Claudio Lanzieri, Antonio Nanni, Andrea Bentini, Walter Ciccognani, Sergio Colangeli, Ernesto Limiti

Keywords:

GaN-on-Silicon, MMIC, Passive Components

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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