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Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)

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Abstract:

We have grown graphene on 6H-SiC(0001) and 3C-SiC(111)/Si (111) using propane-hydrogen CVD. This contribution studies the effects of pressure on graphene growth and on its structural properties studied through low energy electron diffraction. We show that varying pressure allows to control the formation of graphene on a (6√3×6√3)-R30° interface reconstruction (low pressure) or graphene with in-plane rotational disorder (high pressure) on both 6H-SiC(0001) and 3C-SiC(111). The effects of the SiC morphology before graphene growth are discussed in order to explain the differences observed between polytypes.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

253-257

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.253

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Online since:

January 2012

Authors:

Adrien Michon, Elodie Roudon, Marc Portail, Denis Lefebvre, Stephane Vézian, Yvon Cordier, Antoine Tiberj, Thierry Chassagne, Marcin Zielinski

Keywords:

3C-SiC/Si, 6H-SiC, CVD, Graphen

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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