Paper Title:
Simulation of Substrate Temperature Distribution in Diamond Films Growth on Cemented Carbide Inserts by Hot Filament CVD
  Abstract

Three-dimensional finite element simulations were used to investigate the influences of various hot filaments and other deposition parameters on the temperature field of substrates which affect significantly the growth and quality of diamond films by hot filament chemical vapor deposition (HFCVD) and based on the simulation results, the optimum position for diamond deposition was found. In the experiment, six cemented tungsten carbide inserts were used as substrates and placed on the workbench in the CVD reactor to deposit diamond films. According to the temperature distribution on substrates measured by thermocouple fixed in CVD reactor, the simulations were validated and the optimum arrangement of substrates was established from the simulation results. In addition, the simulation model was altered to optimize the process parameters of HFCVD deposition, and an improved process of depositing diamond films with high quality was obtained in order to achieve the great surface morphology, which laid the foundation of developing a new method to arrange the substrates in the CVD reactor for depositing diamond films.

  Info
Periodical
Edited by
Kai Cheng, Yingxue Yao and Liang Zhou
Pages
864-868
DOI
10.4028/www.scientific.net/AMM.10-12.864
Citation
W. Zuo, B. Shen, F. H. Sun, M. Chen, "Simulation of Substrate Temperature Distribution in Diamond Films Growth on Cemented Carbide Inserts by Hot Filament CVD", Applied Mechanics and Materials, Vols. 10-12, pp. 864-868, 2008
Online since
December 2007
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