Paper Title:
Band Gap Optimization by Ga and S Additions in CuInSe2 for Solar Cell Absorber Applications
  Abstract

Gallium or sulphur additions in CuInSe2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The films energy band gap could be shifted from 1.04 to 1.68eV by adjusting the mole ratio of S/(S+Se) and In/(In+Ga). It is possible to obtain the optimum energy band gap by adding S solute or Ga at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In to provide better properties of CIS films.

  Info
Periodical
Chapter
Chapter 6: Composite Materials
Edited by
Wu Fan
Pages
1176-1180
DOI
10.4028/www.scientific.net/AMM.110-116.1176
Citation
B. Munir, K. K. Ho, "Band Gap Optimization by Ga and S Additions in CuInSe2 for Solar Cell Absorber Applications", Applied Mechanics and Materials, Vols. 110-116, pp. 1176-1180, 2012
Online since
October 2011
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