Paper Title:
Performance Analysis of Nanoscale Double Gate MOSFETs with High-κ Gate Stack
  Abstract

The performance and characteristics of Double Gate MOSFET with high dielectric constant (high-κ) gate stack have been analyzed and compared with those of conventional pure SiO2 gate MOSFET. Quantum Ballistic Transport Model has been used to demonstrate the performance of the device in terms of threshold voltage, drain current in both low and high drain voltage regions and subthreshold swing. The effect of temperature on the threshold voltage and subthreshold characteristics has also been observed. This work reveals that improved performance of this structure can be achieved by scaling the gate length and illustrates its superiority over SiO2 gate MOSFETs in achieving long-term ITRS goals.

  Info
Periodical
Chapter
Chapter 9: Nanomaterials and Nanomanufacturing
Edited by
Wu Fan
Pages
1892-1899
DOI
10.4028/www.scientific.net/AMM.110-116.1892
Citation
E. Farzana, S. Chowdhury, R. Ahmed, M. Z. Rahman Khan, "Performance Analysis of Nanoscale Double Gate MOSFETs with High-κ Gate Stack", Applied Mechanics and Materials, Vols. 110-116, pp. 1892-1899, 2012
Online since
October 2011
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Price
$32.00
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