Paper Title:
Copper Indium Silicon Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering
  Abstract

Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); XRD studies of the annealed films indicate the presence of CuInSi, a peak at about 2θ=42.400°. The morphology of the film surface was studied by SEM. The nanocrystallization with needle shape of CuInSi could be seen clearly. The grain size is a few hundred angstroms.

  Info
Periodical
Chapter
Chapter 15: Meso/Micro Manufacturing Equipment and Processes
Edited by
Wu Fan
Pages
3289-3292
DOI
10.4028/www.scientific.net/AMM.110-116.3289
Citation
J. S. Xie, J. H. Li, P. Luan, "Copper Indium Silicon Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering", Applied Mechanics and Materials, Vols. 110-116, pp. 3289-3292, 2012
Online since
October 2011
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$32.00
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