Paper Title:
An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET
  Abstract

A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

  Info
Periodical
Chapter
Chapter 16: Modeling, Analysis, and Simulation of Manufacturing Processes II
Edited by
Wu Fan
Pages
3332-3337
DOI
10.4028/www.scientific.net/AMM.110-116.3332
Citation
S. S. Qin, H. M. Zhang, H. Y. Hu, X. B. Xu, X. Y. Wang, "An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET", Applied Mechanics and Materials, Vols. 110-116, pp. 3332-3337, 2012
Online since
October 2011
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