Paper Title:
Model of Electron Scattering of Strained Si /Si1-xGex (100)
  Abstract

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

  Info
Periodical
Chapter
Chapter 16: Modeling, Analysis, and Simulation of Manufacturing Processes II
Edited by
Wu Fan
Pages
3338-3342
DOI
10.4028/www.scientific.net/AMM.110-116.3338
Citation
J. J. Song, H. Y. Wu, H. M. Zhang, H. Y. Hu, H. S. Shan, "Model of Electron Scattering of Strained Si /Si1-xGex (100)", Applied Mechanics and Materials, Vols. 110-116, pp. 3338-3342, 2012
Online since
October 2011
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Price
$32.00
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