Paper Title:
Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications
  Abstract

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

  Info
Periodical
Chapter
Chapter 24: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
5380-5383
DOI
10.4028/www.scientific.net/AMM.110-116.5380
Citation
T. R. Naik, V. R. Naik, N. P. Sarwade, "Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications", Applied Mechanics and Materials, Vols. 110-116, pp. 5380-5383, 2012
Online since
October 2011
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Price
$32.00
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