Paper Title:
Analytical Threshold Voltage Models for Strained Si/Strained Si1-xGex/Relaxd Si1-yGey PMOSFET
  Abstract

Threshold voltage models for both buried channel and surface channel for the dual-channel strained Si/strained Si1-xGex/relaxd Si1-yGey(s-Si/s-SiGe/Si1-yGey) p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) are presented in this paper. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel, because the hole mobility in the buried channel is higher than that the surface channel. They offer a good accuracy as compared with the results of device simulator ISE.

  Info
Periodical
Chapter
Chapter 24: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
5447-5451
DOI
10.4028/www.scientific.net/AMM.110-116.5447
Citation
S. S. Qin, H. M. Zhang, H. Y. Hu, X. Y. Wang, G. Y. Wang, "Analytical Threshold Voltage Models for Strained Si/Strained Si1-xGex/Relaxd Si1-yGey PMOSFET", Applied Mechanics and Materials, Vols. 110-116, pp. 5447-5451, 2012
Online since
October 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, Kenji Fukuda
Abstract:It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the...
783
Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to...
711
Authors: K. Senthil Kumar, Saptarsi Ghosh, Anup Sarkar, S. Bhattacharya, Subir Kumar Sarkar
Chapter 23: Computer-Aided Design, Manufacturing, and Engineering
Abstract:With the emergence of mobile computing and communication, low power device design and implementation have got a significant role to play in...
5150
Authors: Hu Jun Jia, Yin Tang Yang, Lian Jin Zhang, Bao Xing Duan
I. Materials Science, Engineering and Technology
Abstract:A novel 4H-SiC MESFET with stepped-channel (stepped-spacer) structure is proposed for the first time and analyzed by 2D numerical simulation....
21
Authors: Tamara Rudenko, Sylvain Barraud, Yordan M. Georgiev, Vladimir Lysenko, Alexey Nazarov
Chapter 1: Low-Power Electronics and Spintronics
Abstract:This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold...
17