Paper Title:
Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology
  Abstract

An analytical expression for collector resistance of a novel vertical SiGe partially-depleted accumulation-subcollector HBT on thin SOI is obtained. Supported by simulation result, the resistance decreases quickly with the increase of substrate-collector bias and improves the transit frequency dramatically. The model is found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.

  Info
Periodical
Chapter
Chapter 24: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
5452-5456
DOI
10.4028/www.scientific.net/AMM.110-116.5452
Citation
X. B. Xu, H. M. Zhang, H. Y. Hu, S. S. Qin, J. T. Qu, "Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology", Applied Mechanics and Materials, Vols. 110-116, pp. 5452-5456, 2012
Online since
October 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, John W. Palmour, Sei Hyung Ryu
1145
Authors: Andrei O. Konstantinov, Martin Domeij, Carina Zaring, Imre Keri, Jan Olov Svedberg, Krister Gumaelius, Mikael Östling, Mats Reimark
Abstract:The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of...
1057
Authors: Li Li, Hong Xia Liu
Microelectronic Technology
Abstract:SiGe heterojunction structure much improves the performance of PnP HBT (heterojunction bipolar transistor), which focus on the impact of Ge...
1183
Authors: Volker Häublein, Gerhard Temmel, Heinz Mitlehner, Gudrun Rattmann, Christian Strenger, Andreas Hürner, Anton J. Bauer, Heiner Ryssel, Lothar Frey
Chapter 10: Device and Application
Abstract:N-LDMOS and n-LIGBT structures were manufactured with the same dimensions on a 4H-SiC wafer in order to allow for a direct comparison. The...
887
Authors: Yue Hu, Hao Wang, De Wen Wang, Cai Xia Du, Miao Miao Ma, Jin Yang, Jin He
Chapter 7: Nanomaterials, Microelectronic Materials and New Functional Materials
Abstract:A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial...
514