Paper Title:
Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified I-V Characteristic
  Abstract

In this paper, a method of determining physical dimension of Double Barrier Quantum Well (DBQW) of Resonance Tunneling Diodes (RTDs) is presented by using I-V characteristic governing on them. In this procedure, first we have used performance metrics related to RTDs I-V characteristic such as Peak to Valley Current Ratio (PVCR), peak current density (JP), valley current density (JV) and Voltage Swing (VS), and by some other arbitrary points, we have fitted a curve to the RTD current-voltage equation by MATLAB software. Then we have obtained the physical parameter of I-V equation and adjusted some of them with modification coefficients. Next, by choosing the material of barriers and the well and amount of doping, we have calculated the thicknesses of both. To review the mentioned method, the experimental result of I-V characteristic of the sample structure DBQW is considered and we have come to this idea that the dimensions gained out of this method are highly correlated with those of the experimental sample.

  Info
Periodical
Chapter
Chapter 24: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
5464-5470
DOI
10.4028/www.scientific.net/AMM.110-116.5464
Citation
A. Shahhoseini, S. Ghorbanalipour, R. Faez, "Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified I-V Characteristic", Applied Mechanics and Materials, Vols. 110-116, pp. 5464-5470, 2012
Online since
October 2011
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