Paper Title:
The New Material Structure Design and Research of the GaAs-Based Resonant Tunneling Diodes
  Abstract

Use MBE technology grew three different structures’ RTD to get a contrast test on device with different thickness of well structure’s DC character,they all grew on semi-insulating GaAs substrates, and use I-V analysis instrument tested the I-V character of the RTD in room temperature, in the test results , the PVCR of the best device was up to 7.1,VP is reduced to 0.4V ,then we analyzed the relationship between the device material structure and I-V character , this paper provided a reference for the better performance of the RTD structure design.

  Info
Periodical
Chapter
Chapter 24: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
5471-5475
DOI
10.4028/www.scientific.net/AMM.110-116.5471
Citation
J. Wang, B. Z. Zhang, "The New Material Structure Design and Research of the GaAs-Based Resonant Tunneling Diodes", Applied Mechanics and Materials, Vols. 110-116, pp. 5471-5475, 2012
Online since
October 2011
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Price
$32.00
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