Paper Title:
Studies on the Preparation and Characterization of Ferroelectric PLZT Film Capacitors
  Abstract

(Pb0.92La0.08)(Zr0.65Ti0.35) O3(PLZT) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates to create transparent capacitor by the sol-gel method following annealing process. X-ray diffraction analysis shows that the PLZT thin films are polycrystalline with a single perovskite phase at 650°C. The ferroelectric, electrical and optical properties of these films were investigated in detail as a function of annealing temperature. Measurements with the PLZT films annealed at 650°C yielded the following: relative permittivity≈775 and dielectric loss (tanδ) ≈0.054, leakage current of 7.1× 10-9A, and remanent polarization of 38 μC/cm2 and the coercive electric field of 55 kV/cm and transparency of 88%. The pure perovskite films exhibit better properties than those films which have some fraction of pyrochlore phase.

  Info
Periodical
Chapter
Chapter 24: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
5483-5486
DOI
10.4028/www.scientific.net/AMM.110-116.5483
Citation
L. Liu, H. Wang, J. W. Xu, M. F. Ren, L. Yang, "Studies on the Preparation and Characterization of Ferroelectric PLZT Film Capacitors", Applied Mechanics and Materials, Vols. 110-116, pp. 5483-5486, 2012
Online since
October 2011
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